姓名

陈丽香

性别

女

出生年月

1992.10

最高学历、学位

博士

职称

讲师

职务

无

电子邮箱

chenlixiang@usts.edu.cn

个人简介

一、基本情况：

2014/08-2019/12，西安电子科技大学，材料物理与化学，博士研究生，导师：马晓华

2010/09-2014/07，西安电子科技大学，电子科学与技术，学士

二、主要研究领域及学术成就：

长期从事宽禁带半导体器件研究，目前重点关注高性能氮化镓射频功率器件的研究。主持国家自然科学青年基金1项、江苏省科技计划青年基金1项。在IEEE Electron Device Lett.、IEEE Trans. Electron Devices、Appl. Phys. Lett.、IEEE WiPDA等国际主流期刊会议发表SCI论文10余篇，获授权国家发明专利5项。担任Semiconductor Science and Technology等期刊审稿人。获电子信息类青年教师讲课比赛华东赛区二等奖，全国三等奖。

三、代表性科研成果：

论文：

(1)L. Chen, M. Ma, J. Cao, J. Sun, M. Que, and Y. Sun. “Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors”, Chinese Physics B, 2021, 30(10): 108502

(2)L. Chen, H. Wang, B. Hou, M. Liu, L. Shen, X. Lu, X. Ma, and Y. Hao. “Hetero-integration of Quasi Two Dimensional PbZr0.2Ti0.8O3 and GaN/AlGaN HEMT and Non-volatile Modulation of 2DEG.” Applied Physics Letters, 2019, 115(19):193505.

(3)L. Chen, X. Ma, J. Zhu, B. Hou, F. Song, Q. Zhu, M. Zhang, L. Yang, and Y. Hao. “Polarization Engineering in PZT/AlGaN/GaN High-Electron-Mobility Transistors.” IEEE Transactions on Electron Devices, 2018, 65(8): 3149-3155.

(4)L. Chen, X. Ma, J. Zhu, B. Hou, Q. Zhu, M. Zhang, L. Yang, J. Yin, J. Wu, and Y. Hao. “Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam-Induced Current.” IEEE Transactions on Device and Materials Reliability, 2018, 18(3): 259-363.

(5)L. Chen, Q. Zhu, B. Hou, J. Zhu, X. Ma, and Y. Hao. “Influence of the oxygen in Hot-Carrier-Stress-Induced degradation in AlGaN/GaN high electron mobility transistors.” The 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, 2018.

(6)L. Chen, X. Ma, J. Zhu, B. Hou, M. Zhang, L. Yang, and Y. Hao. “Direct observation of gate leakage paths in AlGaN/GaN HEMTs by EBIC.” The 12th International Conference on Nitride Semiconductors (ICNS), 2017.

(7) J. Zhu,L. Chen, J. Jiang, X. Lu, L. Yang, B. Hou, M. Liao, Y. Zhou, X. Ma, Y. Hao, “Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance.” IEEE Electron Device Letters, 2018, 39(1):79-82.

(8) Q. Zhu,L. Chen, B. Hou, M. Wu, X. Ma, and Y. Hao. “Threshold Voltage Instability (PBTI) of GaN-Based Recessed MOS-HEMTs with Fast-IV-Sweep Method.” The 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) 2018.

(9) J. Zhu, Q. Zhu,L. Chen, M. Wu, B. Hou, L. Yang, Y. Hao, and X. Ma, “Exponential dependence of capture cross section on activation energy for interface traps in Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures.” Applied Physics Letters, 2017, 111(16): 163502.

(10) J. Zhu, Q. Zhu,L. Chen, B. Hou, L. Yang, and Y. Hao, “Impact of Recess Etching on the Temperature-Dependent Characteristics of GaN-Based MIS-HEMTs With Al2O3/AlN Gate-Stack.” IEEE Transactions on Electron Devices, 2017, 64(3):840-847.

专利：

(1)马晓华，陈丽香等.含有铁电栅介质的叠层栅增强型GaN高电子迁移率晶体管及制备方法: 201710558126.4[P]. 2017.10.

(2)郝跃，祝杰杰，陈丽香等.基于掺杂HfO2铁电栅介质的AlGaN/GaN增强型HEMT器件及制作方法: 201710557658.6[P]. 2017.10.

(3)马晓华，郝跃，陈丽香等. HEMT器件及其制备方法: 201810461440.5[P]. 2018.10.