三、代表性科研成果: (1)Cui, Z. J., Cai, D. L., Li, Y., Li, C. X., Ling, Y., & Song, Z. T. (2021). Investigation of the effect of blade electrode width on performance of phase change memory. Semiconductor Science and Technology, 36(10), 105003. (2)Liu, X., Hu, J., Yue, C., Della Fera, N., Ling, Y., Mao, Z., & Wei, J. (2014). High performance field-effect transistor based on multilayer tungsten disulfide. ACS nano, 8(10), 10396-10402. (3)Yue-Feng, G., Zhi-Tang, S., Yun, L., Yan, L., & Yi-Jin, L. (2010). Simulation of voltage SET operation in phase-change random access memories with heater addition and ring-type contactor for low-power consumption by finite element modeling. Chinese Physics Letters, 27(6), 068501. (4)高疲劳性能新型存储器研究 ,江苏省人才厅项目 (5)40nm芯片规模化生产技术, 科技部项目 |